Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics

WCM - Compact Modeling Chapter 8

Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation

Authors: C. Zhang, W. Wang, Y. Liu, Y. Ye, W. Zhao, J. He, W. Wu

Affilation: Peking University Shenzhen SOC Key Laboratory, China

Pages: 518 - 520

Keywords: negative bias temperature instability (NBTI), FinFET, nanoscale, R-T theory

A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory is on the basis of the hypothesis that threshold voltage variation is induced by H atoms captured by either shallow or deep level traps in the gate oxide. The advantage of the novel NBTI model is demonstrated by comparing with the classical Reaction-Diffusion NBTI model. A good match between the proposed NBTI model and the experimental results is obtained in terms of the temperature dependence and the structure effect of nanoscale FinFETs.

ISBN: 978-1-4822-5827-1
Pages: 570
Hardcopy: $209.95

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