Authors: C. Ma, J. He, M. Chan, C. Du, Q. He, Y. Ye, W. Zhao, W. Wu, X. Zhang, W. Wang
Affilation: PKU-HKUST ShenZhen-HongKong Institution, China
Pages: 525 - 528
Keywords: nanowire, NBTI, modeling, reaction-diffusion, circuit
A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from the reaction-diffusion (R-D) theory and calibrated by the measurement data. It is experimentally shown that the rate of threshold voltage change of the SNWFET is not constant but varies with stress time under pure electrical stress condition. Overall, it follows a single exponential function with a nominal value of 0.25 under the NBTI stress condition. In addition, it is observed from the derived model and measurement data that the hydrogen diffusion constant varies from 0.8 to 0.52 as the recovery time increases in the recovery process. The developed model has been implemented into a circuit simulator and the effects of NBTI on the delays of the digital gates and oscillator circuits have been evaluated.