Nanotech 2014 Vol. 2
Nanotech 2014 Vol. 2
Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational & Photonics

Photonic Materials & Devices Chapter 7

Single-crystalline 3C-SiC thin-film on large Si substrate for photonic applications

Authors: D. Massoubre, L. Wang, J. Chai, G. Walker, L. Hold, M. Lobino, S. Dimitriev, A. Iacopi

Affilation: Griffith University, Australia

Pages: 416 - 419

Keywords: 3C-SiC, GaN, photonic, LED on Si, DBR on Si, photonic cristal

We present our recent progress in the hetero-epitaxial growth of single-crystalline cubic silicon carbide (3C-SiC) on large silicon (Si) wafer and its use for photonic applications. Single-crystalline 3C-SiC thin-film on Si opens new opportunities to develop photonic applications on Si, either as a growth template to integrate efficient gallium nitride (GaN)-based optoelectronic devices on Si, as a photonic material to perform ultra-fast (~GHz) electro-optical manipulation of light at telecom wavelengths or even for quantum photonic. We demonstrate the fabrication of 3C-SiC-based DBR on large Si wafer, as well as the growth of GaN-LED on SiC-on-Si.

ISBN: 978-1-4822-5827-1
Pages: 570
Hardcopy: $209.95