Authors: K. Horio, H. Onodera, T. Fukai
Affilation: Shibaura Institute of Technology, Japan
Pages: 497 - 500
Keywords: GaN, HEMT, current collapse, back-electrode
Two-dimensional transient analysis of gate-field-plate AlGaN/GaN high electron mobility transistors with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. Effects of introducing a field plate and a backside electrode on buffer-related lag and current collapse are studied. It is shown that the introduction of gate field plate is effective in reducing lag and current collapse when the acceptor density in the buffer layer is high. On the other hand, the introduction of backside electrode is shown to be effective in reducing drain lag and current collapse particularly when the acceptor density in the buffer layer is relatively low, because the fixed potential at the backside electrode reduces electron injection into the buffer layer and the resulting trapping effects.