Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Packaging, Compound Semiconductors, Power Electronics Chapter 2

Low frequencies anomalies in GaAs FETs

Authors: M.A. Iqbal

Affilation: University of the Punjab, Pakistan

Pages: 83 - 86

Keywords: traps, noise, DLTS, dispersion, transients

The activation energy and capture cross section of the traps founds in GaAs field Effect transistors (GaAs FETS) have been measured both in ohmic and saturation region. A variety of transients found using frequency dispersion, generation recombination noise techniques and DLTS techniques. The measure properties indicate that thermal emission from these traps is not a simple exponential. The transient differ from one trap to another and the location of each traps are influenced by the device structure.

ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95

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