Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Compact Modeling Chapter 10

Modeling of Chain History Effect based on HiSIM-SOI

Authors: Y. Fukunaga, M. Miyake, A. Toda, K. Kikuchihara, S. Baba, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch

Affilation: Hiroshima university, Japan

Pages: 788 - 791

Keywords: SOI-MOSFET, history effect, chain history effect, charge strage

SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect prevents the further improvement of the device switching speed. Here we investigate the history effect under the dynamic operating condition, and develop a compact model applicable for detailed analysis. The special focus is given on modeling the chain history effect.

ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95