Authors: Y. Fukunaga, M. Miyake, A. Toda, K. Kikuchihara, S. Baba, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
Affilation: Hiroshima university, Japan
Pages: 788 - 791
Keywords: SOI-MOSFET, history effect, chain history effect, charge strage
SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect prevents the further improvement of the device switching speed. Here we investigate the history effect under the dynamic operating condition, and develop a compact model applicable for detailed analysis. The special focus is given on modeling the chain history effect.