Authors: S. Khandelwal, T.A. Fjeldly
Affilation: NTNU, Norway
Pages: 744 - 747
Keywords: AlGaN/GaN HEMT, compact modeling
We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed previously by our group. We combine Cch model with Meyer capacitance model and develop analytical expressions for CGS and CGD which are valid in all regions of device operation. The proposed model is in excellent agreement with the experimental data.