Authors: S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu
Affilation: Norwegian University of Science & Technlogy, Norway
Pages: 780 - 783
Keywords: UTBSOI, FDSOI, surface-potential
An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated surface-potential is in excellent agreement with the numerical solution with an accuracy of the order of nano-volts.The method can be used to develop complete surface-potential based compact model for these devices.