Nanotech 2012 Vol. 2
Nanotech 2012 Vol. 2
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)

Compact Modeling Chapter 10

Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control

Authors: S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu

Affilation: Norwegian University of Science & Technlogy, Norway

Pages: 780 - 783

Keywords: UTBSOI, FDSOI, surface-potential

An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated surface-potential is in excellent agreement with the numerical solution with an accuracy of the order of nano-volts.The method can be used to develop complete surface-potential based compact model for these devices.

ISBN: 978-1-4665-6275-2
Pages: 878
Hardcopy: $209.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community