Authors: Y. Che, H. Liang, Q. Chen, C. Wang, H. He, Y. Cao
Affilation: PKU-HKUST Shenzhen-Hongkong Institution, China
Pages: 264 - 268
Keywords: coaxial carbon nanotube field effect transistor, analog/RF performance, simulation, ULSI, nanoscale device
the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details in this paper based on the non-equilibrium Green’s function simulation. The analysis method is described and the CNTFET analog/RF performance dependence on the operation bias, device chirality, and gate oxide thickness are demonstrated. These results will be useful for the device scientists and circuit engineers to optimize the CNTFET structure and improve its circuit performance for the potential analog/RF application in near future.