Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

MEMS & NEMS Fabrication, Devices & Applications Chapter 5

Comparison of Electrical performance of Symmetric Toggle Switch with different dielectric layers

Authors: K. Maninder

Affilation: Central Electronics Engineering Research Institute, India

Pages: 369 - 373

Keywords: RF MEMS, HfO2, SiO2, dilecetric, STS

This paper presents the electrical performance comparison of Symmetric Toggle RF MEMS Switch (STS), by incorporating hafnium oxide (HfO2) as a dielectric material instead of silicon dioxide (SiO2). Fig. 1(a) and (b) shows the 3-D view and working principle of STS. STS is based on 50Ω CPW configuration with torsion springs of movable membrane anchored to the ground planes of CPW. The bridge structure consists of two micro-torsion actuators, which are connected to each other through levers and an over-lap area. The membrane is at a gap of 3 µm from central conductor.In this paper an idea of using similar device design for two different bands has been presented by using two different dielectric materials. Same switch design and mask can be used to fabricate the RF MEMS capacitive Symmetric Toggle Switch to operate in two different bands with optimum performance

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95

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