Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Micro & Nano Reliability Chapter 3

An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

Authors: C. Zhang

Affilation: Peking University, China

Pages: 180 - 183

Keywords: interface trap, gate oxide trap, subthreshold current, MOSFET reliability

Abstract:
In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1μm.


ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95