Authors: H. Abebe, E. Cumberbatch
Affilation: USC/ISI, United States
Pages: 800 - 802
Keywords: circuit simulation, compact device modeling, MOSFET, SPICE
We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with numerical results. The compact models are developed based on the graphene material physics using 1-D approximation for circuit simulation application.