Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 10

Analytic potential model for asymmetricunderlap gate-all-around MOSFET

Authors: S. Wang

Affilation: Peking University, China

Pages: 776 - 779

Keywords: asymmetric, underlap, misalinment, gate-all-around

An analytic potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed in this paper. This model is derived by solving the Poisson’s equation with the parabolic potential approximation, channel length transformation and conformal mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed model shows good agreements, with different dimensions of the structure and varied bias conditions. The model here is appropriate for predicting the effect of gate misalignment or asymmetric gate underlap in GAA MOSFETs’ design.

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95