Authors: Y.S. Chauhan, D. Lu, S. Venugopalan, T. Morshed, M.A. Karim, A. Niknejad, C. Hu
Affilation: University of California Berkeley, United States
Pages: 720 - 725
Keywords: FinFET, UTBSOI, ETSOI, FDSOI, MOSFET, compact model, BSIM-CMG, BSIM-IMG
FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and UTBSOI FET. BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. BSIM-IMG model has been developed to model independent double gate MOSFET capturing threshold voltage variation with back gate bias. Both models have been verified by TCAD simulation/measurements and show good results for all types of real device effects like SCE, DIBL, Mobility degradation, Poly depletion, QME etc.