Papers:
Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type
Miura-Mattausch M., Miyake M., Kikuchihara H., Feldmann U., Amakawa S., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP
Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. [...]
MOSFET threshold voltage: definition, extraction, and applications
The threshold voltage VT is a fundamental parameter in the characterization of MOS transistors and should be used, whatever is the adopted model for the transistor. The classical definition of threshold: phis = 2phiF +V [...]
UF “Compact” Models: A Historical Perspective
The history of the developments of “compact” models for SOI MOSFETs at the University of Florida (UF) is reviewed. The uniqueness and innovation of the UF “process-based” models are reiterated, and their global utility as [...]
Compact Models for sub-22nm MOSFETs
Chauhan Y.S., Lu D., Venugopalan S., Morshed T., Karim M.A., Niknejad A., Hu C., University of California-Berkeley, US
FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and [...]
Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs
This paper presents a unified compact model (Xsim) for bulk/SOI MOSFETs, double-gate (DG) FinFETs, and gate-all-around (GAA) silicon-nanowires (SiNWs) that has been under development over the past 13 years. One key feature of the model [...]
Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs
We have previously shown that the subthreshold potential distribution of DG and circular gate MOSFETs can be precisely modeled using conformal mapping techniques. Simpler, unified models suitable for circuit design can also be established for [...]
A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics
In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential [...]
High-Voltage MOSFET Compact Modeling
In many new applications like communication and automotive electronics the usage of integrated high voltage MOS transistors (LDMOS and DMOS) requires highly accurate compact models. At first we discuss the industrial requirements for modern high [...]
Modeling of High Voltage Devices for ESD Event Simulation
BCDMOS process technologies are key in enabling highly integrated mixed-signal application for the automotive, medical and industrial sectors. Achieving satisfactory ESD performance in high voltage mixed-signal applications requires synthesized co-design using circuit-level ESD event simulation [...]
Process Variability Modeling for VLSI Circuit Simulation
It is well known that the process variability has severely impacted the delay and power variability in VLSI devices, circuits, and chips, and the impact of process variability keeps increasing as MOSFET devices and CMOS [...]
Modeling Strategies for Flash Memory Devices
Flash memories are one of the most pervasive components of today electronic systems. The continuous scaling of the memory device opened new issues with regards to sensitivity of the cell threshold voltage to degradation mechanisms [...]
Comparison and insight into long-channel MOSFET drain current models
In this paper we provide an insight into the drain current model for long-channel MOSFET devices. A new method to perform the integral of the rigorous Pao-Sah dual integral current is derived. From it, we [...]
HiSIM-DG for Extracting Statistical Variations of Measured I-V Characteristics
The variability of the DG-MOSFET is expected to cause serious problems for real circuit applications. Thus purpose of our investigation is to provide an accurate extraction of device variations, and to predict influence of the [...]
Analytic potential model for asymmetricunderlap gate-all-around MOSFET
An analytic potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed in this paper. This model is derived by solving the Poisson’s equation with the parabolic potential approximation, channel length [...]
Modeling of the impurity-gradient effect in high-voltage MOSFETs
Maekawa Y., Fukushima K., Tanaka A., Kikuchihara H., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP
Two major high-voltage MOSFET types are commonly used by semiconductor industries. One has a symmetrical structure, and the other has a laterally-diffused asymmetric structure called LDMOS. Here our focus is the LDMOS structure, where an [...]
Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors
Amorphous silicon thin-film transistors (a-Si:H TFTs) are widely used in active-matrix backplanes for LCD displays on glass. Unfortunately, DC and dynamic characteristics of a-Si:H TFTs are sensitive [1]; in particular, they suffer form electric-field-induced threshold [...]
Characterization and Modeling of Metal Finger Capacitors
A capacitor solution with no mask or process additions can be formed by the use of interdigitated metal fingers. Often, this metal finger capacitor uses multiple back-end-of-line (BEOL) levels to increase capacitance density. Metal structures [...]
The accurate Electro-Thermal Model of Merged SiC PiN Schottky Diodes
Zubert M., Starzak L., Jablonski G., Napieralska M., Janicki M., Napieralski A., Technical University of Lodz, PL
This paper presents a novel SPICE model for SiC merged PiN Schottky diodes dedicated to the dynamic, as well as to very accurate static simulation. The model takes into account the temperature dependence of device [...]
Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling
We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with [...]
Analytical Solutions to Model the Line Edge Roughness and its Effect on Subthreshold Behavior of DG FinFETs
Monga U., Fjeldly T.A., Norwegian University of Science and Technology, and University Graduate Center (UNIK), NO
Statistical variability such as line edge roughness (LER) and random dopant effects have become major concerns in the nanoscale regime. Due to the intrinsic body, multigate devices such as FinFETs don’t suffer from random dopant [...]
Hot-Carrier-Induced Current Degradation in Deep Sub-Micron MOSFETs from Subthreshold to Strong Inversion Region
In the past decades, as predicted by the Moore’s law, the IC circuit density increases to reduce the cost per chip and to achieve better performance. With critical device dimensions scaling down, the electrical field [...]
The Application of RESCUER Software to Modelling of Coupled Problems in Modern Devices
The simulation of modern electronic devices requiring taking into account physical phenomena of different nature such as electrical, mechanical, thermal or fluidic ones. The most of processes are governed by multidimensional partial differentialalgebraic equations (PDAEs). [...]
Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs
Karim M.A., Venugopalan S., Chauhan Y.S., Lu D., Niknejad A., Hu C., University of California at Berkeley, US
MOSFET intrinsic capacitances going negative is a major concern in the compact model community. Negative Intrinsic Capacitances (NIC) can raise non-convergence issues in circuit simulators. In some cases NICs can be explained using physical phenomena. [...]
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4398-7139-3