Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

MEMS & NEMS Devices Chapter 6

Design of compact, high capacitance ratio MEMS switch for X - Band applications using high-k dielectric materials

Authors: K. Maninder

Affilation: CEERI, India

Pages: 332 - 335

Keywords: STS, high k dielectric, hafnium oxide, rf MEMS switch

This paper presents the design optimization of Symmetric Toggle RF MEMS Switch (STS). STS is based on 50 ohm CPW configuration with torsion springs of movable membrane anchored to the ground planes of CPW. The bridge structure consists of two micro-torsion actuators, which are connected to each other through levers and an over-lap area. The membrane is at a gap of 3 µm from central conductor. Parametric optimization of STS is done by incorporating hafnium oxide as a dielectric layer instead of silicon dioxide. Using hafnium oxide as a dielectric layer material leads to the dimensional scaling of STS to almost 50% of its actual dimensions. Isolation is better and insertion loss is low for the optimized STS as compared to the STS with silicon dioxide as a dielectric layer for the same working band (X-Band).

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community