Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 11

A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs

Authors: B. Cousin, M. Reyboz, O. Rozeau, M.-A. Jaud, T. Ernst, J. Jomaah

Affilation: CEA, LETI, MINATEC, France

Pages: 793 - 796

Keywords: device modeling, gate-all-around (GAA) MOSFET, short-channel effects (SCE)

A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface potential approach. Results regarding I-V characteristics, for short-channel transistors, are compared to numerical simulations and validate our method in all operating regions.

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95

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