Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 11

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

Authors: J. Zhang, J. He, L. Zhang, X. Zhou, Z. Zhou

Affilation: Peking University, China

Pages: 765 - 768

Keywords: charge-based, SOI MOSFET, compact model, double gate

A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from one-dimension Poisson-Boltzmann’s equation. Based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived. And the unified terminal charge and intrinsic capacitance model is also derived under quasi-static case. The validity and accuracy of presented analytic model is proved by extensive verification with numerical simulation.

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95

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