Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Compact Modeling Chapter 11

Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels
B.B. Jie, C-T. Sah
Univesity of Florida, US

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs
Z. Zhou, J. Zhang, X. Zhou, X. Lin, J. He
Peking University, CN

Impact of Gate-Induced-Drain-Leakage current modeling on circuit simulations in 45nm SOI technology and beyond
H. Wang, R. Williams, L. Wagner, J. Johnson, P. Hyde, S. Springer

Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS
Y. Deng, R.A. Rupani, J. Johnson, S. Springer

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel
J. Zhang, J. He, L. Zhang, X. Zhou, Z. Zhou
Peking University, CN

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET
U. Monga, T.A. Fjeldly
UniK/Norwegian University of Science and Technology, NO

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices
H. Abebe, E. Cumberbatch, S. Uno, V. Tyree

Analytic Channel Potential Solution of Symmetric DG AMOSFETs
L. Chen, Y. Xu, L. Zhang, X. Zhou, W. Zhou, J. He
Peking University, CN

Source/Drain Edge Modeling for DG MOSFET Compact Model
T. Nakagawa, S. O’uchi, T. Sekigawa, T. Tsutsumi, M. Hioki, H. Koike
AIST (National Institute of Advanced Industrial Science and Technology), JP

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model
X. Zhou, G.J. Zhu, M.K. Srikanth, S.H. Lin, Z.H. Chen, J.B. Zhang, C.Q. Wei, Y.F. Yan, R. Selvakumar
Nanyang Technological University, SG

Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs
S.K. Vishvakarma, T.A. Fjeldly
Norwegian University of Science and Technology, NO

A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs
B. Cousin, M. Reyboz, O. Rozeau, M.-A. Jaud, T. Ernst, J. Jomaah

Analytical Solution of Surface Potential for Un-Doped Surrounding-Gate MOSFET
A. Dey, A. DasGupta
Arizona State University, US

Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects
J. Dura, S. Martinie, D. Munteanu, M.-A. Jaud, S. Barraud, J.L. Autran
CEA-LETI Minatec, FR

Bias Dependence of Low Frequency Noise in 90nm CMOS
N. Mavredakis, A. Antonopoulos, M. Bucher
Technical University of Crete, GR

Compact Modeling of Signal Transients for Dispersionless Interconnects With Resistive, Capacitive and Inductive Terminal Loads
Chi Liu, Z. Zhou, X. Lin, J. Xia, X. Zhang, J. He
Peking University, CN

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application
W. Feldman, E. Cumberbatch, H. Abebe

Modeling of Mismatch and Across-Chip Variations in Compact Device Models
N. Lu

Guidelines for Verilog-A Compact Model Coding
G. Depeyrot, F. Poullet
Dolphin Integration, FR

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95