Authors: X. Rottenberg, R. Jansen, S. Stoffels, J. De Coster, W. De Raedt, H.A.C. Tilmans
Affilation: IMEC, Belgium
Pages: 593 - 596
Keywords: MEMS, resonator, stability
MEM-resonators are recognized key components for future sensing, wireless and communications applications. Si-based resonators have gained special interest since they offer the perspective to replace bulky quartz resonators on-chip, maintaining high Q-factor and reaching high frequencies. In various applications, e.g., time-reference, the temperature (T-) stability is of paramount importance. We propose a novel passive compensation of the T-drift of electrostatically-driven MEM-resonators. Key in our implementation is the T-driven modulation of the transduction gap that, controlled by design, can fully balance the T-drift due to the intrinsic material properties of the resonator. The further selection of the optimum bias working point allows compensating for potential processing inaccuracies. We apply this idea to bulk-mode bar resonators and derive a condition for full T-stabilisation.