Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Computational Methods, Simulation & Software Tools Chapter 10

Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application

Authors: P. Malik, R. Chaujar, M. Gupta, R.S. Gupta

Affilation: Semiconductor Devices Research Laboratory, India

Pages: 705 - 708

Keywords: ATLAS-3D, corner effect, DEVEDIT-3D, NJD, RF, TRC MOSFET

In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel(GME-TRC) MOSFET(Fig.1.) has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared with Trapezoidal Recessed Channel(TRC) MOSFET(Fig.1.). The influence of technology parameters such as negative junction depth (NJD), substrate doping, workfunction difference has also been investigated for the purposed design GME-TRC MOSFET. Simulation results reveal that GME-TRC MOSFET enhances the linearity performance in terms of figure of merit (FOM) metrics:VIP2, VIP3 and higher order transconductance coefficients: gm1, gm2, gm3, proving its efficacy for RFIC design and wireless application.

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95

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