Authors: P. Malik, R. Chajaur, M. Gupta, R.S. Gupta
Affilation: Semiconductor Devices Research Laboratory, India
Pages: 701 - 704
Keywords: ATLAS-3D, corner effect, DEVEDIT-3D, NJD, RF, TRC MOSFET
In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS and DEVEDIT. Further, the influence of technology parameter variations such as negative junction depth (NJD), substrate doping and workfunction difference has been investigated for the proposed GME-TRC MOSFET. The simulation study reveals that GME-TRC MOSFET exhibits superior performance in terms of cut-off frequency, maximum unilateral power gain (MUG), maximum available power gain (Gma) and intrinsic delay and thus the result offers the opportunity for realizing the reliability of GME-TRC MOSFET for high speed logic and RF applications.
Nanotech Conference Proceedings are now published in the TechConnect Briefs