Nanotech 2010 Vol. 2
Nanotech 2010 Vol. 2
Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Computational Methods, Simulation & Software Tools Chapter 10

Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET

Authors: P. Malik, R. Chajaur, M. Gupta, R.S. Gupta

Affilation: Semiconductor Devices Research Laboratory, India

Pages: 701 - 704

Keywords: ATLAS-3D, corner effect, DEVEDIT-3D, NJD, RF, TRC MOSFET

In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS and DEVEDIT. Further, the influence of technology parameter variations such as negative junction depth (NJD), substrate doping and workfunction difference has been investigated for the proposed GME-TRC MOSFET. The simulation study reveals that GME-TRC MOSFET exhibits superior performance in terms of cut-off frequency, maximum unilateral power gain (MUG), maximum available power gain (Gma) and intrinsic delay and thus the result offers the opportunity for realizing the reliability of GME-TRC MOSFET for high speed logic and RF applications.

ISBN: 978-1-4398-3402-2
Pages: 862
Hardcopy: $189.95