Authors: Y. Song, L.N. Zhang, J. Zhang, H. Zhuang, Y.C. Che, J. He, M. Chan
Affilation: Peking University, China
Pages: 592 - 595
Keywords: non-classical MOS transistor, double-gate MOSFETs, device physics, surface potential model, computation efficiency
A computation efficient yet accurate surface potential-based analytic model for the symmetric double-gate MOSFETs is proposed to simulate double-gate device current-voltage characteristics in this paper. This model consists of a surface potential versus voltage input equation and a drain current expression, which are very similar to that proposed by J. R. Brews for the single-gate (SG) Bulk MOSFET. The model gets rid of requirement of the transcendent trigonometric function used in the previous model, thus, result in the computation efficiency. The model is also verified by extensive comparisons with rigorous numerical solutions under different operation conditions and geometry structures, thus, the new set of surface potential equation and drain current is the framework of a complete DG MOSFET model for computer-aided-design circuit purpose.