Authors: Y. Che, L. Zhang, X. Zhou, J. He, M. Chan
Affilation: Peking University, China
Pages: 371 - 374
Keywords: nanowire, non-classical MOSFETs, schottky barrier device, device physics, modeling, simulation
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics of the silicon-based nanowire Schottky barrier MOSFETs with different geometry and structure parameters and extensive comparisons with the 2-D numerical simulation show that the presented model is valid for all operation regions of such a device with a variety of geometry parameters and different work function configurations of the metal source (drain). Such a compact model may be useful for us to benchmark nanowire Schottky barrier MOSFET circuit performance and device structure optimization.
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