Nanotech 2009 Vol. 1
Nanotech 2009 Vol. 1
Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics

Nanoparticles Chapter 2

Quantum Dot (QD) gate Si-FET with Self Assembled GeOX Cladded Germanium Quantum Dots

Authors: M. Gogna, F. AlAmoody, S. Karmakar, F. Papadimitrakopoulos, F. Jain

Affilation: University of Connecticut, United States

Pages: 163 - 165

Keywords: self assembly, germanium quantum dots, quantum dot FET, germanium FET

This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on p- Si region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addition, threshold shift in a nonvolatile memory structure, having cladded Ge dots, is also presented. The aim here is to fabricate floating QD gate high performance nonvolatile memory scalable to 22 nm processing.

ISBN: 978-1-4398-1782-7
Pages: 702
Hardcopy: $179.95

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