Authors: M. Reyboz, P. Martin, O. Rozeau, T. Poiroux
Affilation: cea-leti, France
Pages: 881 - 884
Keywords: DG MOSFET, Independent gates, continuous model, mobility
We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. In this paper, we present the model with adapted mobility degradation and velocity saturation models.
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