Authors: V. Hariharan, R. Thakker, M.B. Patil, J. Vasi, V.R. Rao
Affilation: IIT Bombay, India
Pages: 857 - 860
Keywords: double-gate, mosfet, model, mobility, saturation, doping, vertical-field
In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account vertical field mobility degradation, lateral field mobility degradation and body doping, and that is valid in sub-threshold as well as above-threshold. The key novelty in this work is that the physical model for velocity saturation has been retained as an integral part of the model derivation, as opposed to adding its effect on the mobility at the end by considering an averaged electric field.