Authors: H. Abebe, H. Morris, E. Cumberbatch, V. Tyree
Affilation: University of Southern California, ISI, United States
Pages: 849 - 852
Keywords: compact device modeling, MOSFET, quantum effects
This paper is a continuation of the work we presented in the 2006 IEEE UGIM Proceedings. Iterative compact device models with quantum mechanical effects for a Double Gate (DG) MOSFET are presented using the Lambert function approach. The quantum model is based on the triangular potential and band gap widening approximations on the intrinsic electron density. The channel current model simulation results are shown in Figure 1-2 and in Figure 3 the charge and capacitance simulations are compared with the Schrödinger-Poisson one dimensional numerical results that are generated from SCHRED (see attached).