Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Improved layout dependent modeling of the base resistance in advanced HBTs

Authors: S. Lehmann, M. Schroter

Affilation: University of Technology Dresden, Germany

Pages: 795 - 800

Keywords: bipolar transistor, SiGe HBT, base resistance, compact modeling

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95

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