Authors: S. Lehmann, M. Schroter
Affilation: University of Technology Dresden, Germany
Pages: 795 - 800
Keywords: bipolar transistor, SiGe HBT, base resistance, compact modeling
Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.