Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation

Authors: M. Miura-Mattausch, M. Chan, J. He, H. Koike, H.J. Mattausch, T. Nakagawa, Y.J. Park, T. Tsutsumi, Z. Yu

Affilation: Hiroshima University, Japan

Pages: 764 - 769

Keywords: multi-gate MOSFET, compact model

We are reporting the construction of a common platform for compact model development based on the Verilog-A language and in particular a framework for efficient development of multi-gate MOSFET models for circuit simulation. Phenomena expected to become important for the multi-gate MOSFET generation are modeled on the basis of their physical origin. These phenomena are implemented into the specific multi-gate MOSFET models by plugging in modules from the common platform. Parasitic resistive and capacitive contributions are also modularized to represent the complete circuit performance of the multi-gate MOSFET model for efficient circuit development.

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95