Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Modeling & Simulation of Microsystems Chapter 5

Process Sensitivity Analysis of a 0.25-um NMOS Transistor Using Two-Dimensional Simulations

Authors: A.A. Keshavarz, L.F. Laurent, P.C. Leonardi

Affilation: STMicroelectronics, United States

Pages: 549 - 552

Keywords: NMOS 2D-Simulation, 0.25-um NMOS, NMOS sensitivity analysis

This work attempts to predict the sensitivity of the 0.25-um NMOS transistor characteristics and parameters to selected manufacturing process steps. The transistor is on the 0.25um line of production in STMicroelectronics. The methdology uses two-dimensional process and device simulation tools from Synopsys, Inc. Accurate process recipes are used for process simulations. Device simulations utilize the latest physical models. Results are validated by measurement data. Eeffects of selected process changes on the device are simulated and results are presented.

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95

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