Authors: J. He, J. Zhang, L. Zhang, C. Ma, M. Chan
Affilation: Peking University, China
Pages: 598 - 601
Keywords: non-classical MOS transistor, surrounding-gate MOSFETs, device physics, surface potential model, non-charge-sheet approximation
An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, a single set of the analytic drain current expression in terms of the surface potential evaluated at the source and drain ends is obtasined from the Pao-Sah’s dual integral without the charge-sheet approximation. It is shown that the derived drain current model is valid for all operation regions, allowing the SRG-MOSFET characteristics to be adequately described from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters. Moreover, the model prediction is also be verified by the 3-D numerical simulation.