Zhang J., Zhang L., He J., Liu F., Zhang J., Zhang L., Feng J., Ma C.
Peking University, CN
Keywords: carrier-based model, compact modeling, device physics, surrounding-gate MOSFET
An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact solution of Poisson’s equation of the surrounding-gate MOSFETs, instead to resorting to the Newton-Raphson numerical iterative. The analytic approximation not only gives accurate dependences of the carrier concentration on the geometry structures and bias, compared with the Newton-Raphson numerical method, but also is used to develop an explicit current-voltage model of the surrounding-gate MOSFETs combined with Pao-Pah current formulation. The presented explicit model is found to be computationally more efficient than the previous numerical Newton-Raphson iterative while more accurate than the previously published explicit model.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 590 - 593
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4200-8505-1