Authors: O. Lupan, G. Chai, L. Chow
Affilation: University of Central Florida, United States
Pages: 5 - 8
Keywords: UV photosensor, ZnO nanorod, nanofabrication
Wide-gap semiconducting metal oxides with nanostructures such as nanorods, nanowires are promising as building nanoblocks in novel devices. Zinc oxide is most widely applied material owing to its characteristics and low cost, radiation hardness, chemical stability, flexibility in fabrication. Recently, ZnO nanorods and nanowires have been extensively investigated for sensors and optoelectronic device applications due to it’s compatibility with other microelectronic devices. Our extensive effort and novel synthesis routes are currently devoted to the controlled synthesis and characterization of ZnO nanoarchitectures. In this report, a new fabrication method of a UV photosensor based on single ZnO nanorods using in situ lift-out technique is presented. UV photosensor have been characterized and demonstrated that could detect UV light down to 50 nW cm 2 intensity, indicating a higher UV sensitivity than ZnO thin films. Our nanotechnology is a starting work on easy techniques development for nanofabrication of optoelectronic devices. Our research result can contribute to widely uses of ZnO as a visible blind UV sensor over a wide range of applications in military and non-military arenas that includes missile plume detection for hostile missile tracking, flame sensors, UV source monitoring, and calibration.