Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Photonics & Nanowires Chapter 1

A simple route to synthesize impurity-free high-oriented SiOx nanowires

Authors: S.C. Chiu, Y.Y. Li

Affilation: National Chung Cheng University, Taiwan

Pages: 138 - 141

Keywords: silicon oxide, nanowire, thermal evaporation

Impurity-free silicon oxide nanowires were synthesized on a 3 cm x 3 cm alumina plate uniformly by thermal evaporation of a mixture of powder of graphite powders and Si-SiOx particles under argon atmosphere with a flow rate of 50 sccm at 1100 oC for 3 hours. The as-synthesized products characterized by field-emission scanning electron microscopy, field-emission transmission electron microscopy and energy-dispersive spectroscopy show that SiOx nanowires were of diameters ranging from 50-100 nm and the height is up to several millimeters. The growth mechanism of SiOx nanowires was studied and suggested to be the vapor-solid (VS) process.

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95

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