Authors: S-Y Park, B-G Cho, T. Won
Affilation: Inha University, Korea
Pages: 50 - 53
Keywords: transient enhanced diffusion, pre-amorphization implant, kinetic Monte Carlo
We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant (PAI) sources and we compared the effects of Si-PAI with those of Ge-PAI at the same condition. The Kinetic Monte Carlo (KMC) investigation of the interstitial distribution revealed that Si-PAI produces more amounts of interstitials than the case of Ge-PAI whilst Ge-PAI makes interstitials move further up to the surface than the Si-PAI case during the annealing process.