Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Photonics & Nanowires Chapter 1

Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon Substrate

Authors: S-Y Park, B-G Cho, T. Won

Affilation: Inha University, Korea

Pages: 50 - 53

Keywords: transient enhanced diffusion, pre-amorphization implant, kinetic Monte Carlo

We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant (PAI) sources and we compared the effects of Si-PAI with those of Ge-PAI at the same condition. The Kinetic Monte Carlo (KMC) investigation of the interstitial distribution revealed that Si-PAI produces more amounts of interstitials than the case of Ge-PAI whilst Ge-PAI makes interstitials move further up to the surface than the Si-PAI case during the annealing process.

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95

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