Authors: M. Schröter and S. Lehmann
Affilation: Technische Universität Dresden, Germany
Pages: 603 - 608
Keywords: non-standard, geometry scaling, compact model, physics-based
The impact of process and geometry effects on important electrical parameters of SiGe HBTs as a function of emitter width is investigated and explained using device and circuit simulations. The goal is to provide a guideline for identifying such effects, especially those causing non-standard geometry scaling, in order to be able to include them in the parameter extraction for geometry scalable physics-based compact models. Simple extensions of the standard scaling law are suggested, which are suitable for compact modeling. Experimental results exhibting some of the effects will be shown as demonstration.