Authors: C.C. McAndrew and P.G. Drennan
Affilation: Freescale Semiconductor, United States
Pages: 594 - 598
Keywords: MOSFET model, halo implant, analytic model
MOSFETs with heavily doped regions at one or both ends of the channel exhibit some quantitative differences in electrical behavior compared to devices with laterally unform channel doping. These can include a peakiness to the transconductance near threshold, asymmetries in capacitance, and a surprising decrease in the statistical variation of the peak gain factor as channel length decreases. Historically accurate modeling of such devices is best done with sectional MOSFET models. Here we present an analytic model of the behavior of the current and transconductance of a (unilaterally or bilaterally) halo implanted MOSFET and show that it predicts the decrease in variation of gain factor with channel length.
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