Authors: M. Chan and W. Wu
Affilation: HKUST, Hong Kong
Pages: 590 - 593
Keywords: parasitics, FinFETs
The geometry-dependent parasitic components in multi-fin FinFETs are studied. The gate-resistance has a stronger dependent on the device geometry compared with the planar MOSFETs. Parasitic fringing capacitance and overlap capacitance become highly coupled to the gate geometry. In this work, we analyse the gate resistance using a distributed RC approach and study the gate capacitance using a conformal mapping approach. A physical model that account for the gate resistance and parasitic capacitive couplings between Source/Drain and gates is presented.
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