Authors: A.S. Roy and C.C. Enz
Affilation: EPFL, Switzerland
Pages: 617 - 620
Keywords: MOSFET, noise, flicker
The low-frequency (LF) noise in MOS devices has been the subject of intensive research during past years. It is becoming a major concern for scaled devices because the LF noise increases as the inverse of the device area. Therefore accurate compact modeling of power spectral density (PSD) of flicker noise is becoming increasingly important. Although the impact of field dependent mobility on thermal noise has received a lot of attention, almost no study has been done on the flicker noise. Therefore, it is not very clear how field dependent mobility affects flicker noise. In this work we apply our generalized noise calculation methodology to the flicker noise calculation.