Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

Authors: Q. Chen, S. Suryagandh, J-S Goo, J.X. An, C. Thuruthiyil and A.B. Icel

Affilation: Advanced Micro Devices, United States

Pages: 570 - 573

Keywords: body current, compact modeling, GIDL, hysteresis, impact ionization, PD SOI

The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD SOI technologies indicate that both components dominate in the body currents at zero gate voltage and non-zero drain voltage. Body currents under these particular conditions are critical to pre-first-switch body voltage establishment, which is definitively validated by a compact modeling experiment. As the OFF-state channel leakage current increases in scaled technologies, these body currents need to be closely monitored and well modeled to properly predict and understand evolution of the hysteresis behavior.

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95