Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits

Authors: Q. Chen, S. Suryagandh, J-S Goo, J.X. An, C. Thuruthiyil and A.B. Icel

Affilation: Advanced Micro Devices, United States

Pages: 570 - 573

Keywords: body current, compact modeling, GIDL, hysteresis, impact ionization, PD SOI

Abstract:
The impact of the gate induced drain leakage and impact ionization currents on hysteresis of PD FB SOI circuits is examined, and a physical understanding is provided. Measured silicon data from 90nm and 65nm PD SOI technologies indicate that both components dominate in the body currents at zero gate voltage and non-zero drain voltage. Body currents under these particular conditions are critical to pre-first-switch body voltage establishment, which is definitively validated by a compact modeling experiment. As the OFF-state channel leakage current increases in scaled technologies, these body currents need to be closely monitored and well modeled to properly predict and understand evolution of the hysteresis behavior.


ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95