Authors: J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik
Affilation: IBM, United States
Pages: 562 - 565
Keywords: MOSFET, compact models, correlation
MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the correlation between them. This paper describes a method of simultating the variation included the geometric dependence of the correlations arising from common halo and separate Vt implants in the devices.
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