Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs

Authors: B. Yu, H. Lu, W-Y Lu and Y. Taur

Affilation: UCSD, United States

Pages: 532 - 537

Keywords: double-gate mosfet

An analytic charge model for both double-gate (DG) and surrounding-gate (SG) MOSFETs is presented. With only the mobile charge term, Poisson’s equation is rigorous solved and the analytic electrostatic potential is derived. The development of charge model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. The model can continuously cover all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters as well as the charge sheet approximation. It is shown that the C-V characteristics generated by this model agree with two-dimensional numerical simulation results.

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community