Authors: A. Ortiz-Conde and F.J. García Sánchez
Affilation: Simón Bolívar University, Venezuela, Bolivarian Republic of
Pages: 526 - 531
Keywords: asymmetric, symmetric, DG, dual-gate, MOSFET, undoped, intrinsic, charge-based, surface potential-based, drain current
In this paper we discuss the compact modeling framework for undoped double-gate SOI MOSFETs. Core compact models, including the analysis for surface potential and drain current for various device structures are discussed and compared. Then, drain current classical physics non-regional core models are unified for undoped-body MOSFETs, from bulk to asymmetric and symmetric double-gate device structures. Unification is attained through the use of a mixed formulation of the drain current based a combination of charge and surface potential. The resulting unified expression describes the behaviour inside the silicon body, and does not explicitly contain the front and back flatband voltages, oxide thicknesses, or gate biases. This type of unification may provide useful insight to the debate about the convenience of using either surface potential-based or charge-based formulations for developing MOSFET core compact models.
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