Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

A PSP based scalable compact FinFET model

Authors: G.D.J. Smit, A.J. Scholten, N. Serra, R.M.T. Pijper, R. van Langevelde, A. Mercha, G. Gildenblat and D.B.M. Klaassen

Affilation: NXP Semiconductors, Netherlands

Pages: 520 - 525

Keywords: compact model, FinFET, PSP

A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, is very suitable for such simulations as it offers an accurate description of not only the currents, but also of the (trans-)conductance and capacitances. Moreover, this surface potential based model is continuous over all operating conditions (subthreshold, linear, saturation). The model is fully scalable and will be demonstrated to describe a full range of device geometries, from the long-channel limit down to the shortest channels, with a single set of parameters.

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95

2015 & Newer Proceedings

Nanotech Conference Proceedings are now published in the TechConnect Briefs

NSTI Online Community