Authors: J. Park, G.-T. Kim, S. Maeng, F. Udrea and W. Milne
Affilation: ETRI, Korea
Pages: 418 - 421
Keywords: ZnO nanowire, microheater, sensor
We fabricated the ZnO nanowire network device using sol-gel synthesis method on the pre-patterned electrode and tested the electrical property for chemical sensing. The electrodes were prepared in various ways, for example, photolithographically defined interdigitated pattern and e-beam lithographically defined 4-point probe pattern to characterize the electrical property of ZnO nanowire device. Compared with single ZnO nanowire device based on the high resolution e-beam lithography technique, our method is cost-effective, time-saving, capable of mass-production and easily applicable to any other substrate, for example, our CMOS-compatible microheater which is an excellent chemical sensor platform. In addition to these merits of fabrication process, our data show much better characteristics : i) much higher current level and ii) almost ohmic IV curve, compared to earlier works because of improvement in the contact resistance between nanowires and electrodes from post-processing like thermal treatment and additional etching method. We are further developing our nanowire network device built on microheater in order to apply to small, fast-responding, very low power-consuming chemical sensor which is one of very promising ubiquitous and mobile IT fields.