Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nanostructured Materials and Devices Chapter 5

Wide Wavelength tuning of ZnSe Nanostructures by Temperature

Authors: W.C.H. Choy, Y.P. Leung, L. Jin and J. Wang

Affilation: The University of Hong Kong, Hong Kong

Pages: 411 - 413

Keywords: wavelength tuning, nanowires, nanobelts, II-VI compound semiconductor

As one of the most important II-VI compound semiconductors with a direct wide band gap, zinc selenide (ZnSe, bulk crystal Eg = 2.7 eV at 300K) [1] exhibits a great potential for various applications. In this article, ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with a single peak at the photon energy of 2eV at room temperature is obtained while the typical bandgap transition energy of ZnSe is 2.7eV. When the temperature is reduced to 150K, the peak wavelength shifts to 2.3eV with yellowish emission and then blue emission with the peak at 2.7eV at temperature less than 50K. The overall wavelength shift of 700meV is obtained as compared to the conventional ZnSe of about 100meV. The details of PL spectra of ZnSe at various temperatures are studied from (i) the spectral profile, (ii) the half-width-high-maximum and (iii) the peak photon energy of each of the emission centers. The results show that the simplified configuration coordinate model can be used to describe the emission spectra and the frequency of the local vibrational mode of the emission centers is determined.

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95

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