Authors: B. Nikoobkht
Affilation: National Institute of Standards and Technology, United States
Pages: 241 - 243
Keywords: nanowire, zinc oxide, nanodevice, directed assembly
A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given surface. In the presented method, sapphire substrate is patterned with gold catalyst using photolithography. After growth of nanowires, using a 2nd step of photolithography, electric contacts are placed precisely on nanowires. Using this technique, large scale electrically addressable nanowires and top-gated field effect nanowire transistors have been made and their electric transport properties have been measured.