Authors: Y.Z. Xiong, G.Q. Lo, J.L. Shi, M.B. Yu, W.Y. Loh and D.L. Kwong
Affilation: Institute of Microelectronics, Singapore, Singapore
Pages: 761 - 764
Keywords: modeling, Schottky diode, 1/f noise, RF noise, RF power, characterization
This study presents comprehensive characterization of Schottky-diode in standard CMOS on its DC, low-frequency and RF noise performance. Random-telegraph-signal (RTS) and 1/f noise have been characterized, along with RF noise, power performances analysis. Results showed that Schottky diodes in standard CMOS are excellent choices for low-noise and high-speed RFIC applications.