Roy A.S., Enz C.C.
Swiss Federal Institute of Technology, Lausanne (EPFL), CH
Keywords: mobility model, MOSFET, noise
This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise parameters.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 757 - 760
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9767985-8-1